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Here’s a RoundUp of this week’s must-read news about SiC, GaN, and Wide Bandgap Materials!
SiC News
Silicon Carbide Market size to hit USD 29 Bn. by 2030 at a CAGR 29.3 percent says Maximize Market Research
The Global Silicon Carbide Market had a value of USD 4.8 billion in 2023. It is projected that the entire income from Silicon Carbide would expand by 29.3% from 2024 to 2030, reaching around USD 29 billion.
The Asia Pacific region is expected to experience significant growth in the global silicon carbide market during the forecast period. The Global Silicon Carbide Market has been analyzed by categorizing it into two primary segments: Component and Application.
Maximize Market Research, a prominent electronics research business, has released a market intelligence report on the worldwide Silicon Carbide Market. According to the analysis, the projected market opportunity by 2030 is estimated to reach USD 29 billion. The market had a valuation of USD 4.8 billion in 2023 and is projected to experience a compound annual growth rate (CAGR) of 29.3 percent throughout the forecast period.
US SiC R&D facility celebrates topping out
The University of Arkansas has reached a significant achievement with the completion of the construction of the Multi-User SiC Research and Fabrication Facility.
The establishment of the new semiconductor facility will provide the federal government, national laboratories, corporations of all sizes, and other universities with the opportunity to develop prototypes using SiC. This capability is now unavailable in any other location within the United States.
The purpose of the facility is to serve as a connection between conventional university research and the requirements of the private industry. The objective is to expedite technological progress by offering a centralized facility where chips can seamlessly transition from research and development to prototype, testing, and production.
The facility, spanning an area of 21,760 square feet, will be situated adjacent to the National Center for Reliable Electrical Power Transmission at the Arkansas Research and Technology Park. It will include roughly 8,000 square feet of clean rooms dedicated to the fabrication and testing processes.
SiC Device Market to Soar at USD 12.85 Billion by 2031, Driven by Sustainability and Electrification Push
According to a report by SNS Insider, the SiC Device Market was valued at USD 2.35 Billion in 2023 and is expected to reach USD 12.85 Billion by 2031, with a compound annual growth rate (CAGR) of 23.6% during the forecast period of 2024-2031.
The market expansion can be attributed to the distinctive characteristics of silicon carbide (SiC) semiconductors. SiC exhibits superior properties in comparison to classic silicon counterparts, including a larger bandgap, stronger thermal conductivity, and fewer switching losses.
The surge in demand for SiC devices is propelled by the continuously expanding electric vehicle (EV) industry. Due to its effective handling of high voltages and currents, SiC is an ideal material for EV battery chargers, on-board chargers, DC-DC converters, and powertrains. Consequently, this results in accelerated charging durations, enhanced driving distances, and heightened overall efficiency for electric vehicles (EVs). In addition to electric vehicles (EVs), silicon carbide (SiC) is being used in several industries including renewable energy (such as solar inverters and wind turbines), medical imaging (such as MRI and X-ray power supply), industrial automation (such as air conditioning and auxiliary power supplies), and integrated vehicle systems. The extensive deployment of SiC devices across numerous end-user industries is propelling the growth of the SiC device market.
Radiated Electromagnetic Interference Modeling for Three Phase Motor Drive Systems with SiC Power Modules
Silicon carbide (SiC) power devices have emerged as the most viable options for replacing silicon (Si) devices. Nevertheless, the rapid switching speed and frequency of SiC power modules give rise to apprehension over emitted electromagnetic interference (EMI).
This research examines the electromagnetic interference (EMI) emitted by a three-phase motor drive system used in electric vehicles (EVs) and more electric aircraft (MEAs). An in-depth analysis is conducted on the electromagnetic interference (EMI) noise sources produced by both the isolated gate drivers and the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The paths of noise propagation have been identified.
A computational model is constructed to determine the emitted electric field radiation within the frequency range of 150 kHz to 30 MHz. The simulation and experimental results demonstrate a strong correlation between the suggested analytical model and the observed emitted electromagnetic interference (EMI). The proposed model is used as a basis for discussing strategies to reduce radiated electromagnetic interference (EMI).
Littelfuse Unveils IX4352NE Low-side Gate Driver for SiC MOSFETs and High-power IGBTs
Littelfuse has introduced the IX4352NE Low-side Silicon Carbide (SiC) MOSFET with Insulated Gate Bipolar Transistor (IGBT) Gate Driver. This driver is specifically engineered to operate Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial settings.
The distinguishing feature of the IX4352NE is its distinct 9 A source and sink outputs, which allow for customized turn-on and turn-off time while reducing switching losses. An inbuilt negative charge regulator is included to allow the user to pick a negative gate drive bias. This improves the immunity to dV/dt and results in faster turn-off. This driver provides great versatility and performance with an operating voltage range (VDD – VSS) of up to 35 V.
GaN News
CNIPA validates EPC GaN patents
Efficient Power Conversion Corp (EPC), a US-based company specializing in Gallium Nitride (GaN) technology, has received validation from the China National Intellectual Property Administration (CNIPA) for their patent titled ‘Compensated gate MOSFET and method for fabricating the same’ (Chinese Patent No. ZL201080015425.X). This patent specifically covers enhancement-mode GaN semiconductor devices.
The decision made on April 30, 2024 was based on a statement made by the CNIPA on April 2, 2024. The announcement verified that the key claims of EPC’s Chinese patent titled ‘Enhancement mode GaN HEMT device and method for producing the same’ (Chinese Patent No. ZL201080015388.2) are valid. Innoscience, a Chinese business, challenged both EPC patents.
The Chinese Patent No. ZL201080015425.X protects the basic structure and arrangement of EPC’s exclusive enhancement mode GaN field effect transistors (FETs) that have a lower gate leakage. The majority of industry participants utilize the GaN gate technology that is protected by this patent.
A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED
Researchers from the Ohio State University and Sandia National Laboratory recently published a technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor.”
GaN/InGaN microLEDs hold great potential as a technology for future displays. The utilization of control transistors and their integration is crucial for developing displays that are both high-performance and efficient. The integration of microLEDs with GaN switching devices allows for the regulation of microLED output power using capacitive control, rather than current-controlled methods. Implementing this strategy can significantly decrease the intricacy of the driver circuit arrays without compromising the opto-electronic performance of the device.
This article showcases a 3-terminal GaN micro-light emitting transistor that integrates a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device demonstrates exceptional regulation of gate control, drain current control, and optical emission control. This study offers a hopeful approach for integrating GaN FETs with microLED in a seamless manner, which can lead to the development of microLED display and communication systems that are characterized by quick switching and high efficiency.
Wolfspeed gets grant for high-power vertical gan transistor with recovery enhancement circuit
Wolfspeed has obtained a patent for a device that includes a barrier layer made of group III-Nitride, a circuit to improve recovery, and a p-region to minimize the impact of overload. The concept incorporates a buffer layer with a larger bandgap to enhance performance. The research by GlobalData provides a comprehensive analysis of Wolfspeed, covering all aspects of the company, including its approach to obtaining patents.
The patent (Publication Number: US11929428B2) reveals a newly developed device and technique for improving the recuperation process in electronic gadgets. The apparatus comprises a substrate, a group III-Nitride barrier layer, a source, a gate, a drain, a p-region, and a recovery enhancement circuit. The p-region is strategically located beneath important components such as the source, gate, and drain. The group III-Nitride barrier layer has a greater bandgap than the buffer layer. The recovery enhancement circuit is specifically engineered to alleviate the consequences of excessive loads received by the gate, hence minimizing recovery time, gate lag, and associated effects.
Guerrilla RF Completes Strategic Acquisition of GaN Device Portfolio from Gallium Semiconductor
Guerrilla RF, Inc. has completed the purchase of Gallium Semiconductor’s complete collection of GaN power amplifiers and front-end modules. Starting from April 26th, 2024, GUER obtained ownership of all previously released components and upcoming cores being developed at Gallium Semiconductor. In addition, GUER has acquired all the related intellectual property (IP) as part of this portfolio acquisition. The Company plans to integrate these assets to greatly improve its current initiatives in developing and marketing a new series of GaN devices specifically designed for wireless infrastructure, military, and satellite communications applications.
Based on the analysis by the Yole Group, the market for RF GaN devices is expected to experience significant expansion, with its value anticipated to increase from $1.3 billion in 2022 to $2.7 billion by 2028. The main reason for this growth can be mainly attributed to significant expansion in three important market segments that are relevant to Guerrilla RF: telecom infrastructure (including 5G and point-to-point systems), military, and satellite communications. These segments are expected to have compound annual growth rates (CAGRs) of 10%, 13%, and 18%, respectively. Furthermore, it is predicted that the GaN on SiC variations used in Gallium Semiconductor’s designs will continue to be the leading force in this market for the next ten years.
Power GaN Devices Market Size, Share, Trends, Growth And Forecast To 2032
The power GaN devices market is projected to grow at a compound annual growth rate (CAGR) of 41.5% between 2024 and 2032, driven by various factors specific to different sectors. The dynamic and competitive business landscape, including of both established companies and emerging players, highlights the industry’s commitment to technological advancement. Despite ongoing challenges, particularly in the area of industrial integration, persistent efforts and collaborations are working towards overcoming these constraints.
The market demonstrates equilibrium and durability due to the dominance of specific market segments in terms of revenue and compound annual growth rate (CAGR), as emphasized by the market segmentation. The geographical trends highlight the global reach of the GaN devices business, with Asia-Pacific showing the greatest potential for growth. As the industry advances, continuing innovation and strategic alliances are expected to continue shaping the future, establishing Power GaN technology as an essential component in various applications across different sectors.
WBG News
Dopants and defects in ultra-wide bandgap semiconductors
Ultra-wide bandgap semiconductors, characterized by bandgaps exceeding 3.5 eV, have significant promise for power-switching electrical devices and ultraviolet light emitters. However, the progress of these materials encounters several obstacles, most of which pertain to regulating electrical conductivity.
This article provides a comprehensive analysis of the main challenges faced by a certain group of materials, namely AlGaN, AlN, BN, Ga2O3, Al2O3, and diamond. The focus is on examining the restrictions in n- and p-type doping, as well as the impact of impurities and native point defects.
The article provides a detailed analysis of ultra-wide-bandgap nitride and oxide semiconductors, highlighting the common issues they encounter. Additionally, it explores the distinct characteristics of diamond, which presents a more exceptional situation. The primary challenge faced by these semiconductors is the attainment of bipolar electrical conductivity, which entails the achievement of both n-type and p-type conductivity inside a single material.
ETRI develops 3kV-class gallium oxide epilayer and device technologies
In partnership with the Korea Institute of Ceramic Engineering and Technology (KICET), the Electronics and Telecommunications Research Institute (ETRI), a non-profit organization funded by South Korea’s Ministry of Culture, Sports and Tourism, has successfully created core materials and device process technologies for gallium oxide (Ga2O3) power semiconductors. Specifically, they have developed the first 3kV-class gallium oxide power semiconductor metal-oxide-semiconductor field-effect transistor (MOSFET) device in Korea.
Gallium oxide is extensively studied globally as a crucial substance for advanced power semiconductors in the future. Japan and the USA have been leading in technological advancements in this field, but ETRI believes that its invention has reduced the difference.
A strategy to boost the efficiency of perovskite/organic solar cells
Recently, scientists have been conducting experiments with various solar cell designs in order to promote their extensive use. Perovskite-based organic solar cells have been discovered to possess several advantages compared to traditional silicon-based solar cell designs. These advantages include reduced fabrication costs, more flexibility, and improved tunability.
A team of scientists from the Suzhou Key Laboratory of Novel Semiconductor-optoelectronic materials and devices at Soochow University have developed a method to prevent the separation of different phases in wide-bandgap perovskites. This technique enhances the efficiency and durability of perovskite/organic tandem cells. This approach, presented in the scientific journal Nature Energy, involves utilizing a synthetic alloy composed of three halide elements in mixed halide perovskite materials that mostly consist of iodine and bromine.
Global Wide-Bandgap Power (WBG) Semiconductor Devices Strategy Report 2024: Market to Reach $10.9 Billion by 2030 from $1.4 Billion in 2022, Growing at a CAGR of 29.4%
The worldwide market for Wide-Bandgap Power (WBG) Semiconductor Devices, valued at around US$1.4 Billion in 2022, is expected to expand to a size of US$10.9 Billion by 2030, with a compound annual growth rate (CAGR) of 29.4% during the analysis period of 2022-2030.
Wide-bandgap (WBG) semiconductors are on the verge of surpassing silicon and becoming essential components in the fields of power, lighting, RF, and optoelectronics, marking an exciting development in the growth of the semiconductor industry.
The report projects that Silicon Carbide (SiC), a specific segment, would achieve a Compound Annual Growth Rate (CAGR) of 29.4% and reach a value of US$6.3 Billion by the conclusion of the analysis period. The Gallium Nitride (GaN) segment is projected to experience a Compound Annual Growth Rate (CAGR) of 31.4% during the next 8 years.
Development of 3kV-Class Gallium Oxide Epitaxial Layer and Device Technologies
The Electronics and Telecommunications Research Institute (ETRI) of Korea, along with its research team, has achieved a significant milestone by successfully developing core material and device process technologies for gallium oxide (Ga2O3) power semiconductors, which are considered the next-generation power semiconductors. Gallium oxide is a crucial substance for the development of advanced power semiconductors, and it has been the subject of extensive global research. Japan and the United States had previously been at the forefront of technological advancements in this field, but the distance between them has now become smaller due to ongoing technological growth.
ETRI, in partnership with the Korea Institute of Ceramic Engineering and Technology (KICET), has reported the successful advancement of 3kV-class gallium oxide power semiconductor Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device technology, marking the first achievement of its kind in Korea. This achievement is a notable example of effective research and development, where the technology for commercialization has been systematically connected and developed within a unique platform-based research group project. It is the first of its kind worldwide.
N-Type Diamond Transistors: New Semiconductor Standards
Researchers in Japan have just made a groundbreaking achievement in the realm of electronics by creating the world’s first “n-channel” diamond-based transistor. This advancement represents a significant milestone in the production of processors that can operate at elevated temperatures, obviating the necessity for direct cooling methods and broadening the operational capacity of electronic components.
Historically, silicon transistors have served as the fundamental building blocks of processor production since the 1960s. Nevertheless, as the scale of the manufacturing process lowers, the physical constraints of silicon are becoming more apparent. Consequently, scientists have been investigating other materials to improve the effectiveness, velocity, and longevity of electronic devices. The advent of diamond-based transistors offers a remarkable chance to enhance the electronics sector.
The researchers have harnessed the potential of diamond in constructing transistors, which are electrical switches that enhance the current flow in electronic circuits. This breakthrough enables the development of smaller, faster, and more energy-efficient electronic components. Moreover, these diamond transistors demonstrate the ability to function in harsh environments, overcoming the restrictions of traditional silicon-based components.
The post Wide Bandgap Week Insights – May 10, 2024 appeared first on Power Electronics News.
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