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SiC News
Empowering growth and inspiring innovation with highly efficient EcoGaN and SiC power solutions
ROHM will showcase its latest power semiconductor solutions, particularly on wide bandgap devices, at the upcoming PCIM Europe event. The SiC, Si, and GaN portfolio is specifically tailored to meet the requirements of different industries, with a particular emphasis on e-mobility and power supply applications.
Products will feature:
- SiC: The company will introduce new SiC power modules for automotive applications, convert to 8″ SiC wafers, and present an update on its SiC product development. The 4th Generation SiC MOSFETs’ industry-leading low ON resistance reduces switching losses and supports 15V and 18V gate-source voltage.
- GaN: Several Evaluation Kits will feature EcoGaN 150V and 650V class GaN HEMTs. Higher integrated PFC and QR flyback converters will be added to the power stage IC BM3GxxMUV-LB series, which includes 650V GaN HEMTs and gate drivers. All electronic systems that need great power density and efficiency benefit from these devices. It will feature over ten EcoGaN boards demonstrating their contributions to industrial solutions.
First 12kW power supply design for AI data centres
Infineon Technologies has created a pioneering 12kW power supply reference design specifically designed for AI data centers, claiming it to be the first in the world.
The 12kW and 8kW designs are meant to enhance the current power supply range, including 3 kW and 3.3 kW options. Modern high-performance graphics processing units (GPUs) demand a power consumption of up to 1 kilowatt per chip, potentially exceeding 2 kilowatts and beyond by the end of the current decade. This will increase the overall energy consumption for data centers, which will drive the development of more efficient designs.
The latest generation of power supply units (PSUs) reach an impressive efficiency rating of 97.5 percent and successfully meet the most rigorous performance standards. The new 8 kW power supply unit (PSU) can handle AI racks with an output of up to 300 kW or more. It has a power density of 100 watts per cubic inch, significantly higher than the current 3 kW unit’s power density of 32 watts per cubic inch.
Infineon asserts that the amalgamation of silicon, silicon carbide, and gallium nitride components facilitates this achievement.
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques
This article presents a new type of 4H-SiC lateral double-diffused metal oxide semiconductor (LDMOS) field-effect transistor with high-k and equivalent variable lateral doping. The transistor’s performance is enhanced and validated using numerical simulation. The drift zone utilizes the three-dimensional equivalent P-top region, requiring only one additional ion implantation step to implement the variable lateral doping (VLD) approach. The utilization of the VLD approach, along with the high-k dielectric in the drift zone, serves to enhance both the doping concentration of the N-drift region and the electric field distribution in said region. The simulation findings demonstrate that the proposed Hk VLD LDMOS exhibits significant improvements in BV, specific on-resistance, and short-circuit withstand time compared to the standard LDMOS device. Specifically, the BV is enhanced by 48.91%, the specific on-resistance is improved by 53.6%, and the short-circuit withstand time is increased by 60.2%.
SiC Innovations Advance Space Power Technology
NASA’s technology plan emphasizes the crucial requirement for progress in power and energy storage to achieve ambitious space exploration goals. NASA’s objectives require state-of-the-art systems to enable extended missions to Mars and beyond.
The risk of power semiconductor devices failing due to radiation is a major challenge. During an interview with EE Times, Akin Akturk, the co-founder and Chief Technology Officer of CoolCAD Electronics, emphasized the significance of resilient technology that can endure the dangers posed by space radiation. CoolCAD is at the forefront of advancing semiconductor devices utilizing silicon carbide (SiC), specifically designed to withstand harsh conditions.
AKM Achieves Successful Proof of Concept for eFuse in High Voltage 800 V Automotive Applications
Asahi Kasei Microdevices Corporation (AKM) and Silicon Austria Labs GmbH (SAL), the European research center for electronics and software-based systems research, have successfully demonstrated the effectiveness of eFuse technology in high-voltage applications using silicon carbide (SiC)-based power devices. The findings indicate that the implementation of eFuse technology can greatly enhance safety while also reducing the expenses associated with materials and maintenance in systems like onboard chargers (OBC) in automobiles.
AKM is manufacturing the CZ39 series, which is a coreless current sensor that has a reaction time of 100 nanoseconds. The fast response capability and great precision of this technology enable exact detection of overcurrent and prompt shutdown of the system. AKM and the Austrian research center SAL have collaborated on a technical verification to develop the eFuse system, which effectively addresses the limitations of traditional mechanical fuse-based protection systems. This solution offers the necessary overcurrent and short-circuit protection for upcoming high-voltage electric vehicle (EV) systems that utilize power devices based on silicon carbide (SiC) and gallium nitride (GaN), such as onboard chargers (OBCs). In addition, the existing sensor incorporated into the eFuse can effectively control the current in interconnected subsystems, thereby decreasing the total number of components.
WeEn Semis to attend PCIM 2024
WeEn Semiconductors, a Chinese startup that originated from NXP, will showcase its SiC technologies, automotive-grade power devices, and high-reliability IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.
WeEn will showcase its assortment of power devices designed for the renewable energy and e-mobility sectors, including high-voltage 1700V SiC power modules, SiC 1200V/750V MOSFETs, thyristors, power diodes, silicon-controlled rectifiers (SCRs), IGBTs, and other power devices. The exhibition will revolve around the theme of ‘Power Efficiency for a Cooler Planet.’
PCIM will showcase a variety of SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) in TSPAK packages for applications such as EV charging, On-Board Charger (OBC), PV inverters, and high power density PSU. The new MOSFETs are offered in four different voltage variants: 650V, 750V, 1200V, and 1700V. They have a resistance range of 20mΩ to 150mΩ. The current range for the new Silicon Carbide Schottky Barrier Diodes (SiC SBDs) is between 10 and 40 Amperes, available in variants with voltage ratings of 650V, 750V, and 1200V.
GaN News
What’s the Latest in GaN-Based Automotive Applications?
Gallium Nitride (GaN) semiconductors improve the power density and efficiency of automotive systems such as on-board chargers (OBCs), high-voltage DC-DC converters, and electric-vehicle charging stations.
Gallium Nitride (GaN) has gained significant significance in the field of Electric Vehicle (EV) design. Gallium Nitride (GaN) power devices facilitate the achievement of high power density, extended vehicle range, reduced size, and improved efficiency, resulting in a decrease in the overall cost of electric vehicle (EV) systems.
A New Generation of GaN Power ICs Mimic Silicon MOSFETs
Gallium nitride (GaN) is gaining dominance in the field of power electronics due to its superior characteristics such as faster switching rates and higher efficiency compared to silicon MOSFETs, which have been the dominant technology for many years. However, achieving success in the semiconductor sector is not without challenges.
Operating GaN power devices requires a highly intricate and challenging procedure. The gate drivers utilized for controlling these power FETs must be meticulously engineered to assure optimal and dependable performance while prioritizing safety. Cambridge GaN Devices (CGD), a firm specializing in power chips, seeks to simplify the process with a new line of e-mode GaN power FETs. These FETs may be operated like ordinary silicon MOSFETs, according to CGD.
CGD can reduce the requirement for expensive gate drivers, inefficient driving circuits, negative voltage supply rails, or extra voltage clamping components that can lead to an increase in system complexity and cost.
SiC & GaN Power Semiconductor Market Accelerates at 22.9% CAGR to Reach $11.08 Billion by 2034| Fact.MR
The global SiC & GaN Power Semiconductor Market is projected to have a worth of US$ 1.41 billion by 2024, as stated in a recent industry analysis by Fact.MR. The anticipated revenue is expected to reach $11.08 billion by 2034, with a compound annual growth rate (CAGR) of 22.9% from 2024 to 2034.
Silicon carbide (SiC) and gallium nitride (GaN) power semiconductors are revolutionizing the electronics industry by surpassing the restricted capabilities of traditional silicon-based semiconductors. Silicon carbide (SiC) and gallium nitride (GaN) power semiconductors exhibit high energy efficiency and thermal tolerance. The unique attributes of SiC and GaN power semiconductors make them well-suited for applications that need high temperatures and high frequencies. These semiconductors are widely utilized in the automotive, renewable energy, industrial, and consumer electronics industries.
Cambridge GaN Devices Signs MoU with ITRI Covering GaN-based Power Supply Development
Cambridge GaN Devices (CGD), a fabless semiconductor company specializing in clean tech, is committed to developing energy-efficient GaN-based power devices that enable the production of more environmentally friendly electronics. CGD has recently entered into a Memorandum of Understanding with the Industrial Technology Research Institute (ITRI) of Taiwan to establish a partnership focused on the development of high-performance GaN solutions for USB-PD adaptors. The Memorandum of Understanding (MoU) also includes provisions for the exchange of both domestic and foreign market data, collaborative visits to prospective clients, and cooperative promotional activities.
Sumitomo Chemical to Attend PCIM Europe 2024 to Exhibit its Compound Semiconductor Products for Next-Generation Power Devices
Sumitomo Chemical plans to attend the Power Conversion, Intelligent Motion (PCIM) Europe 2024 event, taking place in Nuremberg, Germany, from Tuesday, June 11 to Thursday, June 13, 2024. The event has been organized every year since 1979, and it serves as a platform for showcasing the most recent PCIM products and technologies from various countries. Simultaneously, there will be a concomitant international conference for specialists in the realm of power electronics, encompassing the study of techniques for transforming, regulating, and distributing electrical energy.
Sumitomo Chemical plans to showcase gallium nitride (GaN) substrates and high-purity GaN-on-GaN epitaxial wafers. These materials are anticipated to be utilized as semiconductor components in future power devices. Gallium Nitride (GaN) power devices are anticipated to play a significant role in decreasing energy consumption in data centers, which are experiencing increased power usage due to the growth of artificial intelligence. Additionally, GaN power devices are expected to enhance battery power conversion efficiency, thereby extending the driving range of electric vehicles.
Power Electronics for Electric Vehicles 2025-2035: Technologies, Markets, and Forecasts
This research presents a comprehensive analysis of the power electronics industry for electric vehicles. It includes valuable insights on the utilization of SiC MOSFETs in various components such as the inverter, onboard charger, and DC-DC converter. The analysis also covers the use of 200mm wafers (8 inches) and highlights the latest developments in automotive OEMs. The adoption of GaN in the automobile sector is being examined, and viable technologies are being analyzed. IDTechEx predicts the future size of the power electronics market based on voltage (600V, 1200V) and technology (Silicon, Silicon Carbide, Gallium Nitride).
Over the next decade, there will be a significant increase in the demand for electric vehicles (EVs), and the market for EV power electronics will experience even more rapid growth. To address consumer apprehensions regarding battery electric vehicles (BEVs) in comparison to internal combustion engines, automobile original equipment manufacturers (OEMs) are actively seeking methods to enhance the range and accelerate the charging process. In addition to advancements in battery and motor technology, the use of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC) and gallium nitride (GaN), has the potential to greatly transform electric vehicle (EV) powertrains. These WBG semiconductors can replace the current silicon (Si) IGBTs and MOSFETs with 800V designs, resulting in substantial efficiency improvements.
WBG News
Rohde & Schwarz presents its solutions for next generation wide bandgap device test and debug at PCIM Europe
Rohde & Schwarz will exhibit its most recent power electronics testing solutions at PCIM Europe in Nuremberg from June 11 to 13. The focus this year will be on methods that tackle the difficulties of testing and debugging the next wide bandgap semiconductors in power electronic converters. The company’s specialists will impart their direct experience in areas such as inverter drive design, double pulse testing, and EMI debugging, using state-of-the-art test instruments from Rohde & Schwarz.
Visitors at booth 619 in hall 7 of PCIM Europe in Nuremberg, Germany, will have the opportunity to witness advanced test solutions for power electronics at the Rohde & Schwarz stand. The focus will be on testing and debugging next-generation wide bandgap devices.
Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films
Introducing scandium into aluminum nitride (AlN) can significantly improve the piezoelectric characteristics of the material, making ScAlN a popular area of research for high-frequency and wide-bandwidth RF device applications. Nevertheless, there have been few studies conducted on the development of crystal structure and the durability of composition when subjected to thermal annealing, particularly at elevated temperatures. This study thoroughly examined the crystal quality, surface morphology, phase, and elemental distribution of ScxAl1−xN thin films produced by sputtering. The investigation was conducted both before and after subjecting the films to high-temperature thermal annealing.
The results of this study offer significant knowledge on the production of wurtzite ScAlN films using thermal annealing. Additionally, these findings serve as valuable references for the advancement of new ScAlN-based technologies.
Accurate hyperfine tensors for solid state quantum applications: case of the NV center in diamond
The decoherence of point defect qubits is primarily influenced by the interaction between the electron spin and nuclear spin, known as the electron spin-nuclear spin hyperfine interaction. This interaction may be quantified using ab initio calculations in theory. Until now, the majority of theoretical studies have concentrated on examining the hyperfine interaction of the nearest nuclear spins. However, there has been little discussion regarding the precision of the forecasts for different nuclear spins. In this study, we illustrate that the calculated hyperfine parameters for the NV center in diamond can exhibit an absolute relative inaccuracy exceeding 100% when employing a first-principles code that adheres to industry norms. To address this problem, we have implemented an alternative approach and have observed a substantial enhancement in the hyperfine values, with a relative mean error of only 1% across all distances. The precise hyperfine data provided for the NV center allows for the exact simulation of NV quantum nodes for quantum information processing and the location of nuclear spins. This is achieved by comparing the experimental and theoretical hyperfine data.
Realization of logic operations via spin-orbit torque-driven perpendicular magnetization switching in a heavy metal/ferrimagnet bilayer
There is considerable interest in using programmable and non-volatile spin-based logic devices for logic circuits. Implementing logic operations with spin-orbit torque (SOT) controlled magnetization switching is an important advancement toward constructing logic-in-memory systems. This study presents experimental evidence of the implementation of four logic operations in a bilayer structure composed of a heavy metal and a ferrimagnet, achieved through the use of spin-orbit torque (SOT) switching. In addition, we present a comprehensive framework for selecting input parameters to accomplish programmable logic operations. Ferrimagnets exhibit a larger and adjustable perpendicular magnetic anisotropy, as well as a comparatively lower saturation magnetization. These characteristics contribute to their enhanced energy efficiency when carrying out logic operations, in contrast to ordinary ferromagnets. Therefore, ferrimagnets show great potential as suitable options for implementation in logic-in-memory architectures, which could ultimately result in the development of spin logic devices that are easy for users to use.
Lab-Grown Diamond Proposes to Heat up the Quantum Technology Market
Emerging quantum technologies rely on material advances to support their intriguing applications. The latest study from IDTechEx, titled “Quantum Technology Market 2024-2034: Trends, Players, Forecasts”, provides a comparison of several platforms including superconductors, silicon photonics, alkali vapors, semiconductors, nanomaterials, and others. Each entity is striving to facilitate solutions for quantum computing, sensing, and communications, each method having its own distinct advantages and downsides. Among all the options, lab-grown diamond has the most potential to address a major issue in the quantum technology markets: cooling.
Nitrogen-vacancy (NV) centers, often known as color centers, occur naturally in diamond. The color centers possess a corresponding spin-state, which, upon exposure to green light, will release red light. The fluorescence intensity of diamond-based quantum computing processor chips or quantum sensors can be determined by the spin state, allowing for straightforward read-out using basic imaging techniques.
The post Wide Bandgap Week Insights – June 7, 2024 appeared first on Power Electronics News.
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