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Here’s a RoundUp of this week’s must-read news about SiC, GaN, and Wide Bandgap Materials!
SiC News
Industry perspective on power electronics for electric vehicles
The global drive to reduce automotive carbon dioxide emissions has made the slow phase-out of gasoline cars and the rise of electric vehicles (EVs) a megatrend. Leading electric vehicle manufacturers recently cut prices to compete for market shares despite rapid market expansion. For fast charging and extended driving range, more electric vehicles are using 800-V batteries with wide-bandgap SiC traction inverters, which are more efficient and have higher power densities than Si ones.
Nevertheless, lowering SiC substrate and epitaxy costs is difficult. However, GaN power switches offer quick switching in DC-DC converters and electric car onboard chargers, reducing module form factors. Due to heteroepitaxial flaws’ high-voltage reliability issues, GaN is not widely used in electric vehicles. This Review covers Si, SiC, and GaN power electronics for electric vehicles from device to circuit and module levels. The three key pillars supporting electric vehicle power electronics growth—efficiency, cost, and reliability—are assessed when comparing rival technologies.
NXP and ZF collaborate on SiC-based traction inverters
NXP Semiconductors has announced a collaboration with ZF on next-generation SiC-based traction inverter solutions for EVs. By leveraging NXP’s advanced GD316x high-voltage isolated gate drivers, the solutions are designed to accelerate the adoption of 800V and SiC power devices.
NXP asserts that its GD316x series of sophisticated, functionally secure, insulated, high-voltage gate drivers integrates various customizable control, diagnostic, monitoring, and protection characteristics to operate the most recent SiC power modules for automotive traction inverter applications. The system design is simplified and the footprint is reduced due to its high level of integration. These features are designed to decrease electromagnetic compatibility (EMC) noise and minimize switching energy losses, resulting in improved efficiency. The fast short-circuit protection timings, which are less than 1 microsecond, when combined with robust and customizable gate drive schemes, enhance the performance of the SiC power modules in the traction inverter.
ROHM’s new EcoSiC
brand combines Performance and Sustainability
ROHM has introduced its latest product line, the EcoSiC brand. EcoSiC is a registered trademark that ROHM uses for their products made using the innovative material known as silicon carbide (SiC). Silicon carbide (SiC) is widely recognized as a crucial material for the development of advanced power semiconductors in the future. The technology provides notable benefits in terms of effectiveness and dependability, especially in demanding applications like electric vehicles, industrial machinery, and renewable energy systems. ROHM is establishing itself as a supplier of cutting-edge and environmentally friendly solutions with the launch of EcoSiC
SiCSem plans plant in Odisha, ties up with IIT
SiCSem Private Limited, a company located in Chennai, intends to set up a SiC process fabrication and assembly, testing, and packaging (ATMP) facility in Odisha.
This initiative would enable India to achieve self-reliance in power semiconductor devices used in emerging technologies including electric vehicles (EVs), fast chargers, green energy systems, solar inverters, motor controls, and beyond 5G connectivity.
The initial undertaking under the collaboration is the localization of silicon carbide (SiC) crystal formation at IIT Bhubaneswar. The initiative is expected to cost Rs 45 crore and aims to introduce expertise in the large-scale manufacture of 150 mm and 200 mm SiC wafers.
ROHM’s New “TRCDRIVE pack (TM)” with 2-in-1 SiC Molded Module: Significantly Reduces xEV Inverter Size
ROHM Co., Ltd. has created four models for the TRCDRIVE pack (TM) series, which consists of 2-in-1 SiC molded modules. These modules include two that are rated at 750V (BSTxxxD08P4A1x4) and two that are rated at 1,200V (BSTxxxD12P4A1x1). They have been specifically designed for xEV traction inverters used in electric vehicles. The TRCDRIVE pack (TM) has a maximum power capacity of 300kW and is designed with a high-power density and a distinctive terminal layout. This design addresses the main difficulties faced by traction inverters, such as reducing size, increasing efficiency, and minimizing labor requirements.
The progress towards attaining a decarbonized society is driving the rapid advancement of automotive electrification. Currently, there is ongoing development of electric powertrain systems that are more efficient, compact, and lightweight. Nevertheless, the quest for SiC power devices, which are gaining prominence as crucial elements, has proven to be a formidable obstacle in obtaining minimal loss inside a compact form. ROHM addresses these challenges inside powertrains using their TRCDRIVE pack (TM).
IDTechEx Summarizes the Emerging Adoption and Future Trends of SiC and GaN in EVs
The SiC MOSFET is a transistor that offers high power density, improved efficiency and is more resistant to high temperatures. The outcome brings advantages to electric vehicles (EVs), such as increased driving distances, quicker charging times and potentially reduced prices for battery electric vehicles (BEVs). SiC MOSFETs have experienced a remarkable increase in usage in the power electronics of electric vehicles (EVs) during the last 5 years.
These advanced components have been widely adopted by car manufacturers like Tesla and Hyundai. According to a study conducted by IDTechEx, SiC inverters accounted for 28% of the Battery Electric Vehicle (BEV) market in 2023. Gallium Nitride High Electron Mobility Transistors (GaN HEMTs), a relatively new technology, have the potential to significantly impact the electric vehicle (EV) market shortly. These technologies offer important advantages in terms of efficiency, but they also encounter considerable obstacles when it comes to being adopted, particularly concerning their overall power-handling capacity. SiC MOSFETs and GaN HEMTs have significant similarities and will both be utilized in the automotive power semiconductor sector. Considering the tradeoffs, in which areas of the power electronics business will we observe the adoption of SiC and GaN?
GaN News
Fraunhofer IZM enables bidirectional charging with onboard charger
The Fraunhofer IZM has addressed the problem of developing an onboard charger that is capable of efficiently charging using AC power at home. The German research center has created an onboard charger that decreases the size of these devices to three liters, cutting the volume in half compared to traditional chargers, while also increasing the charging power from 11 to 22 kW.
To facilitate the implementation of this novel onboard charger, various components were created at Fraunhofer IZM and integrated inside a compact area. One of the components is a sine-amplitude converter (SAC), which is a high-frequency transformer that provides galvanic isolation between the car battery and the supply grid. Nevertheless, the effective advancement of the SAC is facilitated by the utilization of gallium nitride semiconductors (GaN) – innovative and potent semiconductors with a broad energy bandgap, sometimes referred to as wide-bandgap semiconductors. They enable the transformer to be turned on and off at a clock frequency of 1.3 MHz, meaning 1.3 million times per second.
Rapid Access to Future-Proofed SuperGaN Power FET Portfolio a Reality
Transphorm’s high-performance, high-reliability SuperGaN power semiconductors are gaining considerable traction in the power electronics industry by utilizing a vast collection of GaN intellectual property, which includes more than 1,000 patents. The innovations are contained within a typically inactive d-mode GaN platform, which guarantees exceptional durability and dependability. Products that employ SuperGaN FETs see advantages such as increased power density, enhanced efficiency, and decreased overall power system expenses when compared to other options.
VisIC presenting new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMTs at PCIM
VisIC Technologies Ltd, a fabless supplier of power conversion devices using gallium nitride (GaN) transistors, is showcasing its latest power devices and power modules at the Power, Control and Intelligent Motion (PCIM) Europe 2024 event in Nuremberg, Germany. The company is presenting its new Gen 1+ 650V/6mΩ and Gen 2 650V/5mΩ GaN HEMT power devices, along with a new range of power modules capable of handling over 650V/500Arms current. These products are designed for use in battery electric vehicles, AI data centers, and renewable energy applications.
VisIC asserts that the market is rapidly transitioning from silicon to silicon carbide (SiC), and currently shifting towards the emerging trend of GaN-on-silicon to decrease the carbon dioxide (CO2) emissions in power conversion applications. The company states that by using 8″ (200mm) silicon-based wafers and upcoming 12″ (300mm) wafers, they can avoid any worries about supply shortages and achieve cost reductions in the future.
CML announces Ka-band GaN power amplifier
CML Micro has introduced a Ka-band gallium nitride (GaN) power amplifier, which serves as an economical component for commercial satellite communication terminals that are produced in large quantities.
The CMX90A705 is a compact two-stage GaN linear power amplifier that has a saturated power output of +37.4 dBm (equivalent to 5.5 W). It operates within the frequency range of 27.5 to 31 GHz and offers a tiny signal gain of 16.5 dB. It can serve as both a driver and the ultimate step of power amplification in satellite communication terminals.
The PA has been specifically designed to facilitate integration, with RF input and output ports that are ideally matched to 50 Ω and have integrated DC blocking capacitors. The evaluation board includes drain and gate feed decoupling capacitors that are specifically designed for QPSK modulation.
Uses Of GaN, GaAs, And SiGe
Gallium Nitride (GaN) is being increasingly adopted in a wide range of new applications, demonstrating its adaptability and exceptional performance. LiDAR systems in autonomous vehicles, robots, and drones are utilizing GaN’s rapid switching speeds.
Gallium Nitride (GaN) plays an increasingly crucial role in the telecommunications infrastructure of 5G networks. GaN-on-SiC (Silicon Carbide) has become prominent because of its exceptional power, efficiency, and bandwidth characteristics. This makes it an essential element in base stations, remote radio heads, and large MIMO (Multiple Input, Multiple Output) systems.
GaN-on-Si (Silicon) technology has become a common and essential component of 5G networks, namely in the sub-6 GHz and mmWave bands. It provides a cost-effective alternative that is increasingly becoming popular. In addition, GaN’s exceptional power density and efficiency make it a highly promising option for power amplifiers in 5G handsets and small-cell deployments, particularly in densely populated urban regions.
WIN Semis announces mmWave GaN-on-SiC tech
WIN Semiconductors, a Taiwanese compound semiconductor foundry, has broadened its range of RF GaN technologies by introducing a beta version of a durable mmWave GaN on SiC technology.
The NP12-0B platform is centered around a 0.12μm gate RF GaN HEMT technology that includes several improvements to increase the durability and resilience to moisture at the die level. NP12-0B incorporates many transistor enhancements that ensure exceptional durability when used in deep-saturation/high-compression pulsed and continuous wave (CW) circumstances.
WIN states that the new technology eradicates the pulse droop behavior that is typically seen in GaN HEMT power amplifiers. As a result, this technology enhances the range and sensitivity of pulsed mode radar systems. In addition, the NP12-0B model has an increased moisture ruggedness option, ensuring exceptional resistance to humidity when utilized in plastic containers.
WBG News
Wide Bandgap Semiconductor Spintronics Second Edition
Spintronics is currently being investigated in multiple areas. One area of recent interest is semiconductor spintronics, which involves using materials developed for electronics and optoelectronics to manipulate the spin of particles. This allows for the creation of spin-transistors and quantum logic devices, which can combine electronic and magnetic functions on a single semiconductor template. This book primarily focuses on the spintronic characteristics of III-V Nitride semiconductors.
Scientists Tame Quantum Bits in a Widely Used Semiconductor Material
The researchers in this study examined qubits built from vacancies in silicon carbide (SiC) using several theoretical approaches. Previously, researchers had limited knowledge of the control and manipulation of the selected formation process for vacancies. The barrier energies associated with vacancy migration and combination present the most formidable obstacles for theoretical analysis and computer simulations.
The researchers at the Department of Energy’s Midwest Center for Computational Materials (MICCoM) used advanced materials simulations and a neural-network-based sampling technique to uncover the atomistic generation mechanism of qubits from spin defects in a wide-bandgap semiconductor. The researchers demonstrated the process by which qubits are generated in SiC, a very promising semiconductor that exhibits long qubit coherence periods and possesses the ability to initialize and read out spins using just optical methods. MICCoM is a Computational Materials Sciences center funded by the Department of Energy. It focuses on creating open-source software tools to assist scientists in modeling, simulating, and predicting the properties and behavior of functional materials. The researchers participating in this work are affiliated with Argonne National Laboratory and the University of Chicago.
The Perfect Match – (U)WBG Semiconductors and Information Technology are Revolutionizing Power Electronics
Currently, there is ongoing development of a new type of advanced power electronics known as cognitive power electronics, which incorporates extra artificial intelligence capabilities. These “perceptive systems” are fitted with sensors that can detect different physical characteristics and embedded electronics that can capture and analyze data immediately. Electric drives are transformed into integrated intelligent systems that possess knowledge of their current operational state. Cognitive power electrical systems utilize machine learning techniques to accurately forecast and independently respond to both internal and external stimuli and occurrences.
A strikingly natural coincidence: Researchers find heating gallium nitride and magnesium forms a superlattice
Research conducted by Nagoya University in Japan discovered that when gallium nitride (GaN) is thermally reacted with metallic magnesium (Mg), it forms a unique superlattice structure. This marks the initial occasion in which researchers have successfully detected the incorporation of two-dimensional metal layers into a larger semiconductor material.
Through meticulous examination of the materials using advanced characterization techniques, the researchers gained a novel understanding of the processes involved in semiconductor doping and elastic strain engineering. The researchers disseminated their discoveries in the scientific publication known as the journal Nature.
Global Electric Vehicle( EV) Inverter Market Projected to Grow to $13 Billion by 2030, at 14% CAGR in 2024-2030
The “Global EV Inverter 2024-2030” market is projected to have significant growth, increasing from $2.98 Billion in 2023 to $12.98 Billion by 2030, with a compound annual growth rate (CAGR) of 14%, according to the latest industry study conducted by Mobility Foresights.
The automotive inverter market is projected to witness substantial expansion in the foreseeable future, primarily propelled by the rising demand for electric vehicles (EVs), particularly battery electric vehicles (BEVs). Additionally, stringent emission rules and electric vehicle subsidies are further expediting the global transition towards EVs.
The markets seeing the most substantial growth from 2024-2034 will be China and Europe, with the USA following closely behind. The market expansion will be driven by the increasing use of Battery Electric Vehicles (BEV) and Hybrid Electric Vehicles (HEV) in the Global Electric Vehicle (EV) Inverter Market.
Hong Kong Is Chiming in on China-US Tech Competition
Hong Kong’s purposeful policy of investing in semiconductors and technology demonstrates its intention to align with China’s ambitions and take advantage of loopholes in U.S. rules.
In May 2024, the Finance Committee of the Legislative Council deliberated on a substantial investment of HK$2.83 billion to build the “Hong Kong Microelectronics R&D Institute” with a specific focus on third-generation semiconductors. This endeavor involves establishing a pilot production line that is outfitted with necessary tools, including I-line lithography equipment, photoresist development tools, high-temperature ion implanters, high-temperature annealing furnaces, and thin film tools. The financing was swiftly approved in only 84 minutes, following the strong recommendation of Hong Kong’s Technology and Innovation Secretary, Sun Dong.
Although I-line lithography is considered an older technology in comparison to deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography, it nevertheless plays a vital role in the production of specific types of semiconductors. Examples of these are third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). These semiconductors are utilized in high-performance applications, but they do not always necessitate the exceptionally precise resolution offered by more recent lithography technologies.
Revolutionizing power semiconductors: transformation and trends
Over the past decade, the field of power semiconductors has experienced notable transformations, indicating that substantial changes are on the horizon. The combined value of the power electronics market, which includes individual components and integrated modules, reached US$20.9 billion in 2022 and is projected to increase to US$33.3 billion by 2028. Throughout history, silicon has been the prevailing technology. Its development is ongoing, as it now incorporates 300 mm Si MOSFET and IGBT platforms, which guarantee its ongoing cost competitiveness. However, it is the swift advancement of wide bandgap (WBG) technologies, particularly silicon carbide (SiC) and gallium nitride (GaN), that are primarily responsible for transforming the sector.
Silicon carbide (SiC) is experiencing significant expansion. The SiC power electronics market is expected to have a value of US$10 billion by 2029, representing a market share of 28.6% globally. Technological advancements like as the use of 200 mm platforms, better power densities, and efficient power module packaging are driving this. The tendencies are bolstered by a movement towards vertical integration within the SiC ecosystem. Companies like as STMicroelectronics, ROHM, onsemi, and Wolfspeed are improving their supply chains by incorporating internal substrate fabrication capabilities. Chinese companies such as Tankeblue, SICC, SemiSiC, and others have made significant efforts to increase the capacity of SiC wafer production.
Gallium Nitride (GaN) technology is experiencing significant expansion in various sectors, such as consumer electronics and automotive industries. It is particularly gaining traction in rapid chargers and overvoltage prevention systems, as well as power supply applications in household appliances and data centers. Exploration of the next generation of semiconductors, such as bulk GaN, gallium oxide, and diamond, is being propelled by innovation.
The post Wide Bandgap Week Insights – June 21, 2024 appeared first on Power Electronics News.
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