Here’s a RoundUp of this week’s must-read news about SiC, GaN, and Wide Bandgap Materials!
SiC News
Silicon Carbide Wafer Market Size 2024 to 2031
The market for Silicon Carbide (SiC) wafers is projected to experience a Compound Annual Growth Rate (CAGR) of 10.40% over the estimated period, suggesting a positive and favorable future for the sector. The rising popularity of electric vehicles, renewable energy sources, and the increasing focus on energy efficiency in many industries are driving the need for SiC wafers. Furthermore, the market expansion is being propelled by the progress in manufacturing methods that result in cost reduction, as well as the emergence of new applications in industries like telecommunications and industrial automation.
Axcelis ships Purion EXE SiC implanter to new power device customer in Japan
Axcelis Technologies Inc has delivered a Purion EXE SiC high-energy implanter and successfully completed an evaluation of the Purion H200 SiC medium-energy implanter at power device chipmakers in Japan. The systems will be utilized for the fabrication of silicon carbide power devices in sizes of 150 mm and 200 mm, catering to various power-intensive applications in automotive, industrial, energy, and other sectors.
Silicon Carbide Innovation Alliance to drive industrial-scale semiconductor work
Penn State has established the Silicon Carbide Innovation Alliance (SCIA) to enhance the capabilities of Silicon Carbide (SiC). This alliance consists of industry leaders, academic institutions, and government support, with the goal of becoming the primary research, development, and workforce training center for SiC crystal technology in the nation.
More information about the SCIA, including how to become a member, is available on the alliance’s website.
Global SiC-on-Insulator and Other Substrates Market Set for Robust Growth by 2029, Driven by Technological Advancements and Rising Demand
The market for SiC-on-insulator and other substrates is projected to experience substantial development, with estimates suggesting an increase from USD 99 million in 2024 to USD 149 million by 2029. The anticipated timeframe displays a compound annual growth rate (CAGR) of 8.5%. The main drivers of this growth are the greater implementation of 5G technology and the higher usage in the production of electric vehicles. Moreover, the market’s growth trajectory is further emphasized by the growing prospects arising from the integration of biomedical devices.
GaN News
UK GaN motor drive pioneer doubles crowdfunding target
Quantum Power Transformation (QPT), a UK-based company specializing in power semiconductors, has successfully raised almost £1.2m in a crowdfunding campaign. The campaign aimed to earn £600,000 but exceeded its objective by more than double. The cash will be utilized to expand production capacity and workforce, as well as to secure 12 international patents to safeguard the company’s technologies.
BluGlass closes share purchase plan, adding $5.87m to $4.3m placement
BluGlass Ltd, a company based in Silverwater, Australia, specializes in the development and production of gallium nitride (GaN) blue laser diodes using its exclusive low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology. The company has successfully concluded its share purchase plan (SPP), amassing $5.87 million before expenses.
The additional funds will support working capital and fab capabilities in addition to accelerating production and delivery of the company’s GaN lasers in order to fulfill new and existing contracts.
Promate announces PowerPort Dual USB-C 65W Power Delivery, GaNFast Charger
Promate, a company specializing in charging solutions, has recently unveiled its latest innovation, the PowerPort 65W fast charger. This charger revolutionizes the world of compact and efficient charging solutions with its incorporation of cutting-edge GaNFast (Gallium Nitride) technology.
With the Lightning-Fast GaN charger 65W and a 60W PD Cable (Included) Power Delivery, Promate’s PowerPort-65 ensures a charging speed that is 70% faster than standard chargers. By incorporating GaN components, there is an improvement in portability and a significant increase in charging speeds, surpassing the capabilities of conventional silicon-based alternatives.
WBG News
Wide Band Gap (WBG) Power Device Market Research Report Explained Future Growth | 2024-2032
The Global Wide Band Gap (WBG) Power Device Market Professional Report 2024-2032 is a recent addition to Business Research Insights’ library of research papers. The analysis provides extensive information on the implementation and adoption of Wide Band Gap (WBG) Power Device Market Share in different industrial sectors and geographical areas. Gaining insight into the primary development trends, growth strategies, investments, vendor activity, and government actions is advantageous for all the major stakeholders. Furthermore, the study delineates the significant obstacles, impediments, and favorable prospects that will influence the market’s growth.
Revolutionizing Efficiency: A Comprehensive Analysis of the Wide Band Gap (WBG) Semiconductor Market
The value of the wide-bandgap (WBG) semiconductor devices market was USD 1,954.4 million in 2023; it is projected to attain USD 7,717.72 million by 2030’s conclusion, expanding at a compound annual growth rate (CAGR) of 24.8% over the period from 2023 to 2030.
The principal aim of this Wide Band Gap (Wbg) Semiconductor report is to present a comprehensive and strategic analysis of the industry that serves as the parent company. The research conducts a thorough analysis of every market segment, including any subsegments that may be associated with them. Through an examination of the market’s expansion, market share, industry volume, and anticipated trends, the research offers a comprehensive comprehension of the industry parameters and, consequently, the numerous price fluctuations that may occur in the forthcoming year.
Charging up an electrified future
Researchers are currently investigating a class of materials called ultrawide bandgap semiconductors to address the demand for improved power electronics.
Houqiang Fu, a researcher at ASU, has been awarded the NSF CAREER grant to investigate the potential of ultrawide bandgap semiconductor aluminum nitride in the field of power electronics. Fu’s research focuses on utilizing aluminum nitride to improve power electronics. His goal is to create power field-effect transistors that can efficiently regulate power flow, withstand higher temperatures, and manage more voltage compared to silicon-based transistors.
High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond
Researchers at the National Institute for Materials Science (Japan) have just published a technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.”
The post Wide Bandgap Week Insights – April 5, 2024 appeared first on Power Electronics News.
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