[ad_1]
STMicroelectronics has unveiled plans to construct a state-of-the-art manufacturing facility in Catania, Italy, dedicated to producing power devices and modules using 200mm silicon carbide (SiC) technology. The facility will also include facilities for testing and packaging.
When the SiC substrate manufacturing plant is completed on the same site, it will be combined with these facilities to create ST’s Silicon Carbide Campus. This campus will fulfill the Company’s goal of having a completely vertically integrated manufacturing facility for mass-producing SiC in one location. The establishment of the new Silicon Carbide Campus is a significant achievement aimed at assisting customers in using SiC devices in many sectors such as automotive, industrial, and cloud infrastructure. This initiative is particularly crucial as these industries shift towards electrification and strive for improved efficiency.
The Silicon Carbide Campus will function as the hub of ST’s worldwide SiC ecosystem, consolidating all stages of the production process. This includes the development of SiC substrates, the growth of epitaxial layers, the fabrication of 200mm front-end wafers, the assembly of module back-ends, as well as research and development for processes, product design, advanced laboratories for dies, power systems, and modules, and comprehensive packaging capabilities. This project will be the first of its type in Europe to mass-produce 200mm SiC wafers. The entire manufacturing process, including substrate, epitaxy & front-end, and back-end, will utilize 200mm technology to improve yields and performance.
The next factory is scheduled to commence production in 2026 and reach maximum production capacity by 2033, producing up to 15,000 wafers per week at its peak. The anticipated overall investment is approximately five billion euros, including a financial backing of around two billion euros from the Italian government as part of the EU Chips Act. The Silicon Carbide Campus incorporates sustainable methods in its design, development, and operation to promote responsible resource consumption, particularly in the areas of water and power.
ST’s dominant position in the field of silicon carbide (SiC) is the outcome of 25 years of dedicated research and development efforts, supported by an extensive collection of crucial patents. Catania has historically served as a significant hub for innovation for ST, housing the largest SiC research and development facilities and manufacturing activities. This has led to notable advancements in the production of improved SiC devices. This investment will enhance Catania’s position as a global hub for SiC technology and create more growth opportunities. Catania already has a well-developed power electronics ecosystem, with a successful partnership between ST, the University of Catania, and the CNR. Additionally, there is a wide network of suppliers supporting this ecosystem.
The post STMicroelectronics will build the first fully integrated silicon carbide plant in the world in Italy appeared first on Power Electronics News.
[ad_2]
Source link
