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In the dynamic field of electronics, there is a continual pursuit of more efficient, powerful and compact components. Research and development efforts are underway to redefine the benchmarks for system integration in next-generation semiconductor solutions. These advancements aim to enhance power density and efficiency across a diverse range of power electronics applications.
This issue introduces Infineon’s groundbreaking CoolMOS 8 technology, an advanced MOSFET innovation poised to revolutionize power electronics. CoolMOS 8 is designed to succeed the CoolMOS 7 series, enhancing power density and efficiency across a spectrum of applications from data centers to consumer electronics. One key advancement of CoolMOS 8 is its integration of a fast body diode across the entire series, simplifying part selection for designers and engineers.
Moreover, Sonu Daryanani is drawn to the cutting-edge developments in high-voltage power electronics made possible by gallium oxide, an ultra-wide-bandgap semiconductor. The article presents key takeaways from a webinar conducted by Professor Uttam Singisetti of the University of Buffalo, illuminating the potential of gallium oxide for upcoming applications in high-voltage devices.
Filippo Di Giovanni, a contributing writer at Power Electronics News, delves into the impact of quantum algorithms on optimizing power grid efficiency. Quantum computing represents a rapidly advancing field due to its ability to leverage fundamental quantum phenomena. Unlike classical digital computers, quantum computers boast unparalleled processing power, enabling them to tackle complex calculations far more efficiently.
Giordana Francesca Brescia, a contributing writer at Power Electronics News, explores the transformative potential of smart grid technology in revolutionizing global energy efficiency. Brescia highlights the pivotal role of smart grids in addressing the substantial environmental impact of electricity production, positioning them as a crucial solution in the post-transportation sector for reducing greenhouse gas emissions. The article dissects the advanced architecture of smart grids, emphasizing their integration of digital technologies, IoT advancements and real-time data analysis capabilities.
Also in this issue, we report interviews with several major industry leaders on the latest advancements and applications of gallium nitride and silicon carbide technologies. GaN devices are based on AlGaN/GaN heterostructures, which allow the creation of a two-dimensional electron gas (2DEG) with high mobility to achieve high current density, a key element for power electronics. Automotive-certified SiC power components are a significant development that has the potential to transform the electric-vehicle industry and automotive power systems. Other topics are voltage-clamping components for solid-state circuit breakers; a new, more efficient superatomic semiconductor recently discovered by scientists at Columbia University in New York; and improving the power grid with ultra-wide-bandgap semiconductors.
I invite you all to visit us at Booth 170 in Hall 6 (6-170) during PCIM! We look forward to seeing you there.
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The post PEN ebook June 2024: Next-Generation Power Electronics appeared first on Power Electronics News.
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