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EPC Space is introducing two new radiation-hardened GaN discretes that have a low on-resistance and an extremely low gate charge. These discretes are designed for high-power density solutions and offer a lower cost and higher efficiency compared to the closest radiation-hardened silicon MOSFET.
The EPC7001BSH is a radiation-hardened eGaN® transistor with a voltage rating of 40 V, a current rating of 50 A, and a surface mount package with a resistance of 11 mΩ (FSMDB). Similarly, the EPC7002ASH is a radiation-hardened eGaN transistor with a voltage rating of 40 V, a current rating of 15 A, and a surface mount package with a resistance of 28 mΩ (FSMDA).
Both devices possess a radiation rating above 1,000K Rad(Si) and are immune to Single Event Effects (SEE) caused by Linear Energy Transfer (LET) of 83.7 MeV/mg/cm2. Additionally, they can withstand VDS up to 100% of their rated breakdown. These instruments are enclosed in airtight packages with very compact dimensions.
EPC’s eGaN FETs and ICs provide a superior option to traditional radiation-hardened silicon devices for high-reliability and space-related purposes. EPC’s radiation-hardened devices exhibit a considerably reduced size, 40 times superior electrical performance, and a lower total cost compared to radiation-hardened silicon devices. In addition, EPC Space’s radiation-hardened devices have exceptional resilience to radiation, enabling them to withstand greater amounts of total radiation and SEE LET values in comparison to conventional silicon alternatives.
Gallium Nitride (GaN) power devices surpass silicon-based devices in various aspects. They possess superior breakdown strength, lower gate charge, reduced switching losses, improved thermal conductivity, and lower on-resistance. As a result, GaN-based power devices allow for higher switching frequencies, leading to increased power densities, improved efficiencies, and the creation of more compact and lighter circuitry. These advantages make GaN power devices ideal for critical space missions.
The performance of these items is advantageous for various applications, such as DC-DC power supply for satellites and space mission equipment, motor drives for robots, instrumentation and reaction wheels, deep space probes, and ion thrusters. EPC Space has introduced two new products to its rad-hard product line. These additions provide designers with high power and low on-resistance solutions. As a result, power conversion and motor drives in space can operate at higher efficiencies and greater power densities compared to traditional silicon-based rad-hard solutions.
The post EPC Space expands its offering of radiation-hardened GaN FETs appeared first on Power Electronics News.
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